bta06 bw/cw btb06 bw/cw march 1995 snubberless triacs symbol parameter value unit i t(rms) rms on-state current (360 conduction angle) bta tc = 100 c6 a btb tc = 105 c i tsm non repetitive surge peak on-state current ( tj initial = 25 c) tp = 8.3 ms 63 a tp = 10 ms 60 i 2 ti 2 t value tp = 10 ms 18 a 2 s di/dt critical rate of rise of on-state current gate supply : i g = 500ma di g /dt = 1a/ m s repetitive f = 50 hz 20 a/ m s non repetitive 100 tstg tj storage and operating junction temperature range - 40 to + 150 - 40 to + 125 c c tl maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 c to 220 ab (plastic) . high commutation : (di/dt)c > 5a/ms without snubber . high surge current : i tsm =60a . v drm up to 800v . bta family : insulating voltage = 2500v (rms) (ul recognized : e81734) description symbol parameter bta / btb06-... bw/cw unit 400 600 700 800 v drm v rrm repetitive peak off-state voltage tj = 125 c 400 600 700 800 v absolute ratings (limiting values) features the bta/btb06 bw/cw triac family are high per- formance glass passivated chips technology. the snubberless ? concept offer suppression of rc network and it is suitable for application such as phase control and static switching on in- ductive or resistive load. a1 a2 g 1/5
gate characteristics (maximum values) symbol parameter value unit rth (j-a) junction to ambient 60 c/w rth (j-c) dc junction to case for dc bta 4.4 c/w btb 3.3 rth (j-c) ac junction to case for 360 conduction angle ( f= 50 hz) bta 3.3 c/w btb 2.5 symbol test conditions quadrant suffix unit bw cw i gt v d =12v (dc) r l =33 w tj=25 c i-ii-iii min 2 1 ma max 50 35 v gt v d =12v (dc) r l =33 w tj=25 c i-ii-iii max 1.5 v v gd v d =v drm r l =3.3k w tj=125 c i-ii-iii min 0.2 v tgt v d =v drm i g = 500ma di g /dt = 3a/ m s tj=25 c i-ii-iii typ 2 m s i l i g =1.2 i gt tj=25 c i-iii typ 40 - ma ii typ 80 - i-iii max - 50 ii max - 80 i h *i t = 500ma gate open tj=25 c max 50 35 ma v tm *i tm = 8.5a tp= 380 m s tj=25 c max 1.75 v i drm i rrm v drm rated v rrm rated tj=25 c max 0.01 ma tj=125 c max 2 dv/dt * linear slope up to v d =67%v drm gate open tj=125 c min 500 250 v/ m s typ 750 500 (di/dt)c * without snubber tj=125 c min 5 3.5 a/ms typ 10 7 * for either polarity of electrode a 2 voltage with reference to electrode a 1 . p g (av) =1w p gm = 10w (tp = 20 m s) i gm =4a(tp=20 m s) v gm = 16v (tp = 20 m s). electrical characteristics thermal resistances bta06 bw/cw / btb06 bw/cw 2/5
ordering information package i t(rms) v drm /v rrm sensitivity specification a v bw cw bta (insulated) 6 400 x x 600 x x 700 x x 800 x x btb (uninsulated) 400 x x 600 x x 700 x x 800 x x fig.1 : maximum rms power dissipation versus rms on-state current (f=50hz). (curves are cut off by (di/dt)c limitation) fig.2 : correlation between maximum rms power dissipation and maximum allowable temperatures (t amb and t case ) for different thermal resistances heatsink + contact (bta). fig.3 : correlation between maximum rms power dissipation and maximum allowable temperatures (t amb and t case ) for different thermal resistances heatsink + contact (btb). fig.4 : rms on-state current versus case temperature. bta06 bw/cw / btb06 bw/cw 3/5
1e-3 1e-2 1e-1 1e +0 1 e +1 1 e +2 5 e +2 0.01 0.1 1 zth/rth zt h( j-c) zth(j-a) tp(s) fig.5 : relative variation of thermal impedance versus pulse duration. fig.6 : relative variation of gate trigger current and holding current versus junction temperature. fig.7 : non repetitive surge peak on-state current versus number of cycles. fig.8 : non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and corresponding value of i 2 t. fig.9 : on-state characteristics (maximum values). bta06 bw/cw / btb06 bw/cw 4/5
package mechanical data to220ab plastic i == a g d b c f p n o m l j h cooling method : c marking : type number weight : 2.3 g recommended torque value : 0.8 m.n. maximum torque value : 1 m.n. ref. dimensions millimeters inches min. max. min. max. a 10.20 10.50 0.401 0.413 b 14.23 15.87 0.560 0.625 c 12.70 14.70 0.500 0.579 d 5.85 6.85 0.230 0.270 f 4.50 0.178 g 2.54 3.00 0.100 0.119 h 4.48 4.82 0.176 0.190 i 3.55 4.00 0.140 0.158 j 1.15 1.39 0.045 0.055 l 0.35 0.65 0.013 0.026 m 2.10 2.70 0.082 0.107 n 4.58 5.58 0.18 0.22 o 0.80 1.20 0.031 0.048 p 0.64 0.96 0.025 0.038 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-th omson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the nether- lands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. bta06 bw/cw / btb06 bw/cw 5/5
|
